Next-Generation Devices 1 페이지 | 카이스트 제1원리 나노소자 컴퓨팅 연구실

Next-Generation Semiconductor Devices

- “More Moore" & "More than Moore” devices: multi-value logic, carbon/2D electronics, neuromorphic & energy-efficient computing, etc.

- Quantum sensing & computing devices: quantum DNA sequencing, semiconductor spin qubits etc.

- Energy conversion, & storage devices: solar cells, quantum dot LED, electro/photocatalysts, supercapacitor, battery, etc.

Transistor Scaling ("More Moore")

One of our primary research focuses is the fundamental limit of transistor scaling, as represented by Moore's Law. The characteristic feature of extremely scaled semiconductor devices is that the interfaces with metal electrodes and insulating substrates play a role as important as the semiconductor channel itself. Here, first-principles or atomistic simulations can play a vital role in elucidating the nature of various contacts and further providing design rules to engineer the interfaces. Based on MS-DFT and other in-house developed simulation methods, we are performing state-of-the-art atomistic TCAD simulations that will answer outstanding science and technology problems in developing "More Moore" and "More than Moore" devices.

Selected Publications

● "Characterizing defects inside hexagonal boron nitride using random telegraph signals in van der Waals 2D transistors"

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon Song, Jeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim*, Davood Shahrjerdi*

ACS Nano, Vol. 18, No. 42, Pages 28700-28711 (2024)

Media Coverage: ACS Nano Cover and International Media

● "Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions"

Yong-Hoon Kim*, Hu Sung Kim, Juho Lee, Makusu Tsutsui*, Tomoji Kawai

Journal of American Chemical Society, Vol. 139, No. 24, Pages 8286-8294 (2017)

Media Coverage: KAIST News (in Korean)

Novel Quantum Device Principles ("More than Moore")

We are actively searching for novel quantum-mechanical device principles that will realize "more-than-Moore" (as well as "more-Moore") devices. As an example, we proposed the quantum-hybridization negative differential resistance (QH-NDR) mechanism that can produce nonlinear device functionalities such as multi-valued logic in the extreme scaling limit. The QH-NDR emerges when quantum states initially hybridized across nanoscale interfaces are broken with an increasing applied bias voltage (or other external stimuli), and is fundamentally different from the standard tunneling-based NDR mechanisms realized in the resonant tunneling diode (double-barrier tunneling) and the tunnel diode (band-to-band tunneling).

Selected Publications

● "Semimetallicity and negative differential resistance from hybrid halide perovskite nanowires"

Muhammad Ejaz Khan, Juho Lee, and Yong-Hoon Kim

Advanced Functional Materials, Vol. 29, No. 13, Art. 1807620 (2019)

Media Coverage: KAIST News (in Korean) and KAIST Times (in Korean)

● "Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control"

Juho Lee, Muhammad Ejaz Khan, and Yong-Hoon Kim

Nano Convergence, Vol. 9, Art. 25 (2022).

● "Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures"

Tae Hyung Kim, Juho Lee, Ryong-Gyu Lee, and Yong-Hoon Kim

npj Computational Materials, Vol. 8, Art. 50 (2022)

Media Coverage: KAIST Breakthroughs (Spring 2023)